Elimination of heterojunction band discontinuities by modulation doping
نویسندگان
چکیده
Conductionor valence-band discontinuities occurring at the junction of two heterogeneous semiconductors can be eliminated by appropriate doping of the inter-facial region. We show by analytic and self-consistent calculations that simultaneous modulation doping and parabolic-compositional grading result in flat band-edge potentials. The new concept is applied to distributed Bragg reflectors for vertical cavity lasers. The structures grown by molecular-beam epitaxy exhibit significantly lower resistances as compared to stepgraded distributed Bragg reflectors.
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